tsus4400 www.vishay.com vishay semiconductors rev. 1.7, 24-aug-11 1 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 infrared emitting diode, 950 nm, gaas description tsus4400 is an infrared, 950 nm emitting diode in gaas technology molded in a blue tinted plastic package. features ? package type: leaded ? package form: t-1 ? dimensions (in mm): ? 3 ? peak wavelength: ? p = 950 nm ? high reliability ? angle of half intensity: ? = 18 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? infrared remote control and free air transmission systems with low forward voltage an d small package requirements ? emitter in transmissive sensors ? emitter in reflective sensors note ? test conditions see table basic characteristics note ? moq: minimum order quantity 94 8636 product summary component i e (mw/sr) ? (deg) ? p (nm) tr (ns) tsus4400 15 18 950 800 ordering information ordering code packaging remarks package form tsus4400 bulk moq: 5000 pcs, 5000 pcs/bulk t-1 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 2a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t ? 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 300 k/w
tsus4400 www.vishay.com vishay semiconductors rev. 1.7, 24-aug-11 2 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 1 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21315 t am b - am b ient temperat u re (c) p v - po w er dissipation (mw) r thja = 300 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 t am b - am b ient temperat u re (c) 21316 i f - for w ard c u rrent (ma) r thja = 300 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v i f = 1.5 a, t p = 100 s v f 2.2 v temperature coefficient of v f i f = 100 ma tk vf - 1.3 mv/k reverse current v r = 5 v i r 100 a breakdown voltage i r = 100 a v (br) 540 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf radiant intensity i f = 100 ma, t p = 20 ms i e 71535mw/sr i f = 1.5 a, t p = 100 s i e 140 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e 20 mw temperature coefficient of ? e i f = 20 ma tk ? e - 0.8 %/k angle of half intensity ? 18 deg peak wavelength i f = 100 ma ? p 950 nm spectral bandwidth i f = 100 ma ?? 50 nm temperature coefficient of ? p i f = 100 ma tk ? p 0.2 nm/k rise time i f = 100 ma t r 800 ns i f = 1.5 a t r 400 ns fall time i f = 100 ma t f 800 ns i f = 1.5 a t f 400 ns v irtual source diameter d2.1mm
tsus4400 www.vishay.com vishay semiconductors rev. 1.7, 24-aug-11 3 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 2 - pulse forward current vs. pulse duration fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radiant intens ity/power vs. ambient temperature t p - p u lse d u ration (ms) 94 7947 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t = 0.01, i fm =2a 0.05 0.1 0.5 0.02 0.2 i - for w ard c u rrent (a) f 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i- for w ard c u rrent (ma) f 4 3 2 1 0 v f - for w ard voltage (v) 0.7 0.8 0.9 1.0 1.1 1.2 v f rel - relati v e for w ard voltage (v) 94 7990 t am b - am b ient temperat u re (c) 100 80 60 40 20 0 i f = 10 ma i f - for w ard c u rrent (ma) 94 7982 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i - radiant intensity (mw/sr) e - radiant po w er (mw) e i f - for w ard c u rrent (ma) 94 7980 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t am b - am b ient temperat u re (c)
tsus4400 www.vishay.com vishay semiconductors rev. 1.7, 24-aug-11 4 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - relative radiant power vs . wavelength fig. 9 - relative radi ant intensity vs. angular displacement package dimensions in millimeters 900 950 0 0.25 0.5 0.75 1.0 1.25 - wa v elength (nm) 1000 94 7994 e rel - relati v e radiant po w er i f = 100 ma 0.4 0.2 0 0.2 0.4 i - relati v e radiant intensity e rel 0.6 94 7983 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 3.2 0.15 2.9 0.1 0.4 + 0.15 - 0.05 < 0.6 3.5 0.1 4.5 0.3 6.1 0.3 30.6 0.5 1.5 0.25 0.6 0.15 2.54 nom. dra w ing-no.: 6.544-5255.02-4 iss u e: 3; 23.04.98 specifications according to din technical dra w ings a c area not plane (2.8) r 1.4 (sphere) 95 10914
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